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The [course_title] covers the electrical design principles associated with high-speed digital PCB design and layout. It provides solutions to successfully handle the very fast edges, low noise margins, and other non-ideal characteristics of today’s digital devices including signal and power integrity-related system faults. The course begins with an introduction to today’s digital components and their characteristics. Topics include relative performance, noise margin, and interface requirements.


This course does not involve any written exams. Students need to answer 5 assignment questions to complete the course, the answers will be in the form of written work in pdf or word. Students can write the answers in their own time. Each answer needs to be 200 words (1 Page). Once the answers are submitted, the tutor will check and assess the work.


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Course Credit: Open Culture 

Course Curriculum

module :1
Lecture 1: Introduction and Basic Concepts 00:51:00
Lecture 2-Requirements of High Speed Devices, Circuits & Mat 00:58:00
Lecture-3-Classifications & Properties of Compound Semicond 00:57:00
Lecture4-Temary Compound Semiconductor and their Application 00:57:00
Lecture5-Temary Compound Semiconductor and their Appl – 2 00:57:00
Lecture 6 – Crystal Structures in GaAs 00:57:00
Lecture 7 – Dopants and impurities in GaAs and InP 00:58:00
Lecture 8- Brief Overview of GaAs Technology for High Speed 00:57:00
Lecture 9 – Epitaxial Techniques for GaAs High Speed Devices 00:57:00
Lecture 10 – MBE and LPE for GaAs Epitaxy 00:57:00
module :2
Lecture 11 – GaAs and InP Devices for Microelectronics 00:57:00
Lecture 12 – Metal Semiconductor contacts for MESFET 00:57:00
Lecture13- Metal Semiconductor contacts for MESFET (Contd.) 00:58:00
Lecture14- Metal Semiconductor contacts for MESFET (Contd.) 00:58:00
Lecture 15 – Ohmic Contacts on Semiconductors 00:58:00
Lecture 16 – Fermi Level Pinning & Schottky Barrier Diodes 00:57:00
Lecture 17 – Schottky Barrier Diode 00:57:00
Lecture 18 – Schottky Barrier Diodes 00:56:00
Lecture 19 -Causes of Non-Idealities-Schottky Barrier Diodes 00:57:00
Lecture 20 – MESFET Operation & I-V Characteristics 00:57:00
module :3
Lecture 22 – MESFET Shockley’s Model and Velocity saturation 00:58:00
Lecture 23- MESFET Velocity Saturation effect 00:57:00
Lecture 24 -MESFET Drain Current Saturation 00:57:00
Lecture 25 – MESFET : Effects of channel length and gate length on IDS and gm 00:57:00
Lecture 26 – MESFET: Effects of Velocity Saturation 00:58:00
Lecture 27 – Velocity Field Characteristics 00:57:00
Lecture-28-MESFET-SAINT 00:57:00
Lecture-29-SELF Aligned MESFET-SAINT 00:57:00
Lecture-30-Hetero Junctions 00:56:00
module :4
Lecture-31-Hetero Junctions&HEMT 00:56:00
Lecture-32-Hetero Junctions&HEMT(Contd) 00:57:00
Lecture-33-High Electron Mobility Transistor 00:57:00
Lecture-34-HEMT-off Voltage 00:57:00
Lecture-35-HEMT 1-V Characteristics and Transconductance 00:58:00
Lecture-36-Indium Phosphide Based HEMT 00:58:00
Lecture-37-Pseudomorphic HEMT 00:55:00
Lecture-38-Hetrojunction Bipolar Transistors(HBT) 00:55:00
Lecture-39-Hetrojunction Bipolar Transistors(HBT)-2(Contd) 00:57:00
Lecture-40-Hetrojunction Bipolar Transistors(HBT)-3(Contd) 00:57:00
Lecture-41-Hetrojunction Bipolar Transistors(HBT)-4(Contd) 00:56:00
Submit Your Assignment 00:00:00
Certification 00:00:00

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