The [course_title] covers the electrical design principles associated with high speed digital PCB design and layout. It provides solutions to successfully handle the very fast edges, low noise margins, and other non-ideal characteristics of today’s digital devices including signal and power integrity-related system faults. The course begins with an introduction to today’s digital components and their characteristics. Topics include relative performance, noise margin, and interface requirements.
Course Curriculum
| Lecture 1: Introduction and Basic Concepts | 00:51:00 | ||
| Lecture 2-Requirements of High Speed Devices, Circuits & Mat | 00:58:00 | ||
| Lecture-3-Classifications & Properties of Compound Semicond | 00:57:00 | ||
| Lecture4-Temary Compound Semiconductor and their Application | 00:57:00 | ||
| Lecture5-Temary Compound Semiconductor and their Appl – 2 | 00:57:00 | ||
| Lecture 6 – Crystal Structures in GaAs | 00:57:00 | ||
| Lecture 7 – Dopants and impurities in GaAs and InP | 00:58:00 | ||
| Lecture 8- Brief Overview of GaAs Technology for High Speed | 00:57:00 | ||
| Lecture 9 – Epitaxial Techniques for GaAs High Speed Devices | 00:57:00 | ||
| Lecture 10 – MBE and LPE for GaAs Epitaxy | 00:57:00 | ||
| Lecture 11 – GaAs and InP Devices for Microelectronics | 00:57:00 | ||
| Lecture 12 – Metal Semiconductor contacts for MESFET | 00:57:00 | ||
| Lecture13- Metal Semiconductor contacts for MESFET (Contd.) | 00:58:00 | ||
| Lecture14- Metal Semiconductor contacts for MESFET (Contd.) | 00:58:00 | ||
| Lecture 15 – Ohmic Contacts on Semiconductors | 00:58:00 | ||
| Lecture 16 – Fermi Level Pinning & Schottky Barrier Diodes | 00:57:00 | ||
| Lecture 17 – Schottky Barrier Diode | 00:57:00 | ||
| Lecture 18 – Schottky Barrier Diodes | 00:56:00 | ||
| Lecture 19 -Causes of Non-Idealities-Schottky Barrier Diodes | 00:57:00 | ||
| Lecture 20 – MESFET Operation & I-V Characteristics | 00:57:00 | ||
| Lecture 21 – MESFET I-V Characteristics Shockley’s Model | 00:56:00 | ||
| Lecture 22 – MESFET Shockley’s Model and Velocity saturation | 00:58:00 | ||
| Lecture 23- MESFET Velocity Saturation effect | 00:57:00 | ||
| Lecture 24 -MESFET Drain Current Saturation | 00:57:00 | ||
| Lecture 25 – MESFET : Effects of channel length and gate length on IDS and gm | 00:57:00 | ||
| Lecture 26 – MESFET: Effects of Velocity Saturation | 00:58:00 | ||
| Lecture 27 – Velocity Field Characteristics | 00:57:00 | ||
| Lecture-28-MESFET-SAINT | 00:57:00 | ||
| Lecture-29-SELF Aligned MESFET-SAINT | 00:57:00 | ||
| Lecture-30-Hetero Junctions | 00:56:00 | ||
| Lecture-31-Hetero Junctions&HEMT | 00:56:00 | ||
| Lecture-32-Hetero Junctions&HEMT(Contd) | 00:57:00 | ||
| Lecture-33-High Electron Mobility Transistor | 00:57:00 | ||
| Lecture-34-HEMT-off Voltage | 00:57:00 | ||
| Lecture-35-HEMT 1-V Characteristics and Transconductance | 00:58:00 | ||
| Lecture-36-Indium Phosphide Based HEMT | 00:58:00 | ||
| Lecture-37-Pseudomorphic HEMT | 00:55:00 | ||
| Lecture-38-Hetrojunction Bipolar Transistors(HBT) | 00:55:00 | ||
| Lecture-39-Hetrojunction Bipolar Transistors(HBT)-2(Contd) | 00:57:00 | ||
| Lecture-40-Hetrojunction Bipolar Transistors(HBT)-3(Contd) | 00:57:00 | ||
| Lecture-41-Hetrojunction Bipolar Transistors(HBT)-4(Contd) | 00:56:00 |
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