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The [course_title] covers the electrical design principles associated with high speed digital PCB design and layout. It provides solutions to successfully handle the very fast edges, low noise margins, and other non-ideal characteristics of today’s digital devices including signal and power integrity-related system faults. The course begins with an introduction to today’s digital components and their characteristics. Topics include relative performance, noise margin, and interface requirements.

Course Curriculum

Lecture 1: Introduction and Basic Concepts 00:51:00
Lecture 2-Requirements of High Speed Devices, Circuits & Mat 00:58:00
Lecture-3-Classifications & Properties of Compound Semicond 00:57:00
Lecture4-Temary Compound Semiconductor and their Application 00:57:00
Lecture5-Temary Compound Semiconductor and their Appl – 2 00:57:00
Lecture 6 – Crystal Structures in GaAs 00:57:00
Lecture 7 – Dopants and impurities in GaAs and InP 00:58:00
Lecture 8- Brief Overview of GaAs Technology for High Speed 00:57:00
Lecture 9 – Epitaxial Techniques for GaAs High Speed Devices 00:57:00
Lecture 10 – MBE and LPE for GaAs Epitaxy 00:57:00
Lecture 11 – GaAs and InP Devices for Microelectronics 00:57:00
Lecture 12 – Metal Semiconductor contacts for MESFET 00:57:00
Lecture13- Metal Semiconductor contacts for MESFET (Contd.) 00:58:00
Lecture14- Metal Semiconductor contacts for MESFET (Contd.) 00:58:00
Lecture 15 – Ohmic Contacts on Semiconductors 00:58:00
Lecture 16 – Fermi Level Pinning & Schottky Barrier Diodes 00:57:00
Lecture 17 – Schottky Barrier Diode 00:57:00
Lecture 18 – Schottky Barrier Diodes 00:56:00
Lecture 19 -Causes of Non-Idealities-Schottky Barrier Diodes 00:57:00
Lecture 20 – MESFET Operation & I-V Characteristics 00:57:00
Lecture 21 – MESFET I-V Characteristics Shockley’s Model 00:56:00
Lecture 22 – MESFET Shockley’s Model and Velocity saturation 00:58:00
Lecture 23- MESFET Velocity Saturation effect 00:57:00
Lecture 24 -MESFET Drain Current Saturation 00:57:00
Lecture 25 – MESFET : Effects of channel length and gate length on IDS and gm 00:57:00
Lecture 26 – MESFET: Effects of Velocity Saturation 00:58:00
Lecture 27 – Velocity Field Characteristics 00:57:00
Lecture-28-MESFET-SAINT 00:57:00
Lecture-29-SELF Aligned MESFET-SAINT 00:57:00
Lecture-30-Hetero Junctions 00:56:00
Lecture-31-Hetero Junctions&HEMT 00:56:00
Lecture-32-Hetero Junctions&HEMT(Contd) 00:57:00
Lecture-33-High Electron Mobility Transistor 00:57:00
Lecture-34-HEMT-off Voltage 00:57:00
Lecture-35-HEMT 1-V Characteristics and Transconductance 00:58:00
Lecture-36-Indium Phosphide Based HEMT 00:58:00
Lecture-37-Pseudomorphic HEMT 00:55:00
Lecture-38-Hetrojunction Bipolar Transistors(HBT) 00:55:00
Lecture-39-Hetrojunction Bipolar Transistors(HBT)-2(Contd) 00:57:00
Lecture-40-Hetrojunction Bipolar Transistors(HBT)-3(Contd) 00:57:00
Lecture-41-Hetrojunction Bipolar Transistors(HBT)-4(Contd) 00:56:00

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