The purpose of the [course_title] course is to familiarise you with the physics of microelectronic semiconductor devices for silicon integrated circuit applications. You will learn the fundamentals of semiconductor devices including p-n junction, metal-oxide-semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. Special emphasise will be given on the physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Apart from these, the course guides you about the current device scaling system.
Assessment
This course does not involve any written exams. Students need to answer 5 assignment questions to complete the course, the answers will be in the form of written work in pdf or word. Students can write the answers in their own time. Each answer need to be 200 words (1 Page). Once the answers are submitted, the tutor will check and assess the work.
Certification
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Course Credit: MIT
Course Curriculum
| 6.720 overview; fundamental concepts i | 00:05:00 | ||
| 6.720 overview; fundamental concepts ii | 00:20:00 | ||
| Intrinsic, extrinsic semiconductors; conduction and valence band density of states (DOS) | 00:25:00 | ||
| Carrier statistics in semiconductors; Fermi level | 00:25:00 | ||
| Generation and recombination mechanisms; equilibrium rates | 00:25:00 | ||
| Generation and recombination rates outside equilibrium | 00:30:00 | ||
| Carrier dynamics; thermal motion | 00:25:00 | ||
| Drift; diffusion; transit time | 00:25:00 | ||
| Non-uniform doping distribution | 00:25:00 | ||
| Quasi-Fermi levels; continuity equations | 00:25:00 | ||
| Shockley equations; majority-carrier type situations | 00:25:00 | ||
| Minority-carrier type situations statics | 00:25:00 | ||
| Minority-carrier dynamics; space-charge and high resistivity (SCR) transport; carrier multiplication | 00:15:00 | ||
| PN junction electrostatics in and out of equilibrium | 00:30:00 | ||
| PN junction depletion capacitance; current-voltage | 00:25:00 | ||
| PN junction carrier storage; diffusion capacitance; PN diode parasitics | 00:30:00 | ||
| PN junction dynamics PN diode non-ideal and second-order effects | 00:30:00 | ||
| Metal-semiconductor junction electrostatics in and out of equilibrium; capacitance-voltage (C-V) characteristics | 00:25:00 | ||
| Metal semiconductor junction I-V characteristics | 00:30:00 | ||
| Schottky diode; equivalent-circuit model; ohmic contacts | 00:30:00 | ||
| Ideal semiconductor surface | 00:30:00 | ||
| Metal-oxide-semiconductor (MOS) in equilibrium | 00:25:00 | ||
| MOS outside equilibrium; Poisson-Boltzmann formulation | 00:20:00 | ||
| Simplifications to Poisson-Boltzmann formulation | 00:30:00 | ||
| Dynamics of MOS structure C-V characteristics; three-terminal MOS | 00:20:00 | ||
| Inversion layer transport | 00:25:00 | ||
| Long-channel metal-oxide-semiconductor field-effect (MOSFET) I-V characteristics | 00:25:00 | ||
| I-V characteristics (cont.) body effect, back bias | 00:30:00 | ||
| I-V characteristics (cont.) channel-length modulation, sub threshold regime | 00:25:00 | ||
| C-V characteristics; small-signal equivalent circuit models | 00:30:00 | ||
| Short-channel MOSFET short-channel effects | 00:30:00 | ||
| MOSFET short-channel effects (cont.) | 00:25:00 | ||
| MOSFET scaling | 00:25:00 | ||
| Evolution of MOSFET design | 00:30:00 | ||
| Bipolar junction transistor (BJT) intro; basic operation | 00:25:00 | ||
| BJT I-V characteristics in forward-active | 00:25:00 | ||
| Other regimes of operation of BJT | 00:30:00 | ||
| BJT C-V characteristics; small-signal equivalent circuit models | 00:25:00 | ||
| BJT high-frequency characteristics | 00:30:00 | ||
| BJT non-ideal effects; evolution of BJT design; bipolar issues in complementary metal-oxide-semiconductor (CMOS) | 00:30:00 | ||
| Assessment | |||
| Submit Your Assignment | 00:00:00 | ||
| Certification | 00:00:00 | ||
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