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The purpose of the [course_title] course is to familiarise you with the physics of microelectronic semiconductor devices for silicon integrated circuit applications. You will learn the fundamentals of semiconductor devices including p-n junction, metal-oxide-semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. Special emphasise will be given on the physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Apart from these, the course guides you about the current device scaling system.


This course does not involve any written exams. Students need to answer 5 assignment questions to complete the course, the answers will be in the form of written work in pdf or word. Students can write the answers in their own time. Each answer need to be 200 words (1 Page). Once the answers are submitted, the tutor will check and assess the work.


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Course Credit: MIT 

Course Curriculum

6.720 overview; fundamental concepts i 00:05:00
6.720 overview; fundamental concepts ii 00:20:00
Intrinsic, extrinsic semiconductors; conduction and valence band density of states (DOS) 00:25:00
Carrier statistics in semiconductors; Fermi level 00:25:00
Generation and recombination mechanisms; equilibrium rates 00:25:00
Generation and recombination rates outside equilibrium 00:30:00
Carrier dynamics; thermal motion 00:25:00
Drift; diffusion; transit time 00:25:00
Non-uniform doping distribution 00:25:00
Quasi-Fermi levels; continuity equations 00:25:00
Shockley equations; majority-carrier type situations 00:25:00
Minority-carrier type situations statics 00:25:00
Minority-carrier dynamics; space-charge and high resistivity (SCR) transport; carrier multiplication 00:15:00
PN junction electrostatics in and out of equilibrium 00:30:00
PN junction depletion capacitance; current-voltage 00:25:00
PN junction carrier storage; diffusion capacitance; PN diode parasitics 00:30:00
PN junction dynamics PN diode non-ideal and second-order effects 00:30:00
Metal-semiconductor junction electrostatics in and out of equilibrium; capacitance-voltage (C-V) characteristics 00:25:00
Metal semiconductor junction I-V characteristics 00:30:00
Schottky diode; equivalent-circuit model; ohmic contacts 00:30:00
Ideal semiconductor surface 00:30:00
Metal-oxide-semiconductor (MOS) in equilibrium 00:25:00
MOS outside equilibrium; Poisson-Boltzmann formulation 00:20:00
Simplifications to Poisson-Boltzmann formulation 00:30:00
Dynamics of MOS structure C-V characteristics; three-terminal MOS 00:20:00
Inversion layer transport 00:25:00
Long-channel metal-oxide-semiconductor field-effect (MOSFET) I-V characteristics 00:25:00
I-V characteristics (cont.) body effect, back bias 00:30:00
I-V characteristics (cont.) channel-length modulation, sub threshold regime 00:25:00
C-V characteristics; small-signal equivalent circuit models 00:30:00
Short-channel MOSFET short-channel effects 00:30:00
MOSFET short-channel effects (cont.) 00:25:00
MOSFET scaling 00:25:00
Evolution of MOSFET design 00:30:00
Bipolar junction transistor (BJT) intro; basic operation 00:25:00
BJT I-V characteristics in forward-active 00:25:00
Other regimes of operation of BJT 00:30:00
BJT C-V characteristics; small-signal equivalent circuit models 00:25:00
BJT high-frequency characteristics 00:30:00
BJT non-ideal effects; evolution of BJT design; bipolar issues in complementary metal-oxide-semiconductor (CMOS) 00:30:00
Submit Your Assignment 00:00:00
Certification 00:00:00

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